Luminescence mechanisms in quaternary AlxInyGa1-x-yN materials
Identifieur interne : 00E191 ( Main/Repository ); précédent : 00E190; suivant : 00E192Luminescence mechanisms in quaternary AlxInyGa1-x-yN materials
Auteurs : RBID : Pascal:02-0242572Descripteurs français
- Pascal (Inist)
- 7855C, 7866F, 7867D, 7135G, 8107S, 7321F, 8115G, 8115E, Etude expérimentale, Aluminium composé, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Photoluminescence, Couche épitaxique semiconductrice, Puits quantique semiconducteur, Exciton, Revêtement MOCVD, Méthode ALE, Déplacement raie, Largeur raie, Etat localisé.
English descriptors
- KwdEn :
- Aluminium compounds, Atomic layer epitaxial growth, Excitons, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Line widths, Localized states, MOCVD coatings, Photoluminescence, Semiconductor epitaxial layers, Semiconductor quantum wells, Spectral line shift, Wide band gap semiconductors.
Abstract
Low-temperature photoluminescence investigations have been carried out in the quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by pulsed metalorganic chemical-vapor deposition (PMOCVD). With increasing excitation power density, the emission peaks in both AlInGaN epilayers and MQWs show a strong blueshift and their linewidths increase. The luminescence of the samples grown by PMOCVD is attributed to recombination of carriers/excitons localized at band-tail states. We also demonstrate the luminescence properties of AlInGaN and AlGaN materials grown by a pulsed atomic-layer epitaxy and conventional MOCVD, respectively. © 2002 American Institute of Physics.
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Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Kuokstis, E" uniqKey="Kuokstis E">E. Kuokstis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Yang, J W" uniqKey="Yang J">J. W. Yang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Simin, G" uniqKey="Simin G">G. Simin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author><author><name sortKey="Khan, M Asif" uniqKey="Khan M">M. Asif Khan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Sud</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of South Carolina, Columbia</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0242572</idno><date when="2002-05-20">2002-05-20</date><idno type="stanalyst">PASCAL 02-0242572 AIP</idno><idno type="RBID">Pascal:02-0242572</idno><idno type="wicri:Area/Main/Corpus">00F553</idno><idno type="wicri:Area/Main/Repository">00E191</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Atomic layer epitaxial growth</term><term>Excitons</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Line widths</term><term>Localized states</term><term>MOCVD coatings</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Semiconductor quantum wells</term><term>Spectral line shift</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>7866F</term><term>7867D</term><term>7135G</term><term>8107S</term><term>7321F</term><term>8115G</term><term>8115E</term><term>Etude expérimentale</term><term>Aluminium composé</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Photoluminescence</term><term>Couche épitaxique semiconductrice</term><term>Puits quantique semiconducteur</term><term>Exciton</term><term>Revêtement MOCVD</term><term>Méthode ALE</term><term>Déplacement raie</term><term>Largeur raie</term><term>Etat localisé</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Low-temperature photoluminescence investigations have been carried out in the quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by pulsed metalorganic chemical-vapor deposition (PMOCVD). With increasing excitation power density, the emission peaks in both AlInGaN epilayers and MQWs show a strong blueshift and their linewidths increase. The luminescence of the samples grown by PMOCVD is attributed to recombination of carriers/excitons localized at band-tail states. We also demonstrate the luminescence properties of AlInGaN and AlGaN materials grown by a pulsed atomic-layer epitaxy and conventional MOCVD, respectively. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>80</s2></fA05><fA06><s2>20</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Luminescence mechanisms in quaternary Al<sub>x</sub>In<sub>y</sub>Ga<sub>1-x-y</sub>N materials</s1></fA08><fA11 i1="01" i2="1"><s1>RYU (Mee-Yi)</s1></fA11><fA11 i1="02" i2="1"><s1>CHEN (C. Q.)</s1></fA11><fA11 i1="03" i2="1"><s1>KUOKSTIS (E.)</s1></fA11><fA11 i1="04" i2="1"><s1>YANG (J. W.)</s1></fA11><fA11 i1="05" i2="1"><s1>SIMIN (G.)</s1></fA11><fA11 i1="06" i2="1"><s1>KHAN (M. Asif)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>3730-3732</s1></fA20><fA21><s1>2002-05-20</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0242572</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Low-temperature photoluminescence investigations have been carried out in the quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by pulsed metalorganic chemical-vapor deposition (PMOCVD). With increasing excitation power density, the emission peaks in both AlInGaN epilayers and MQWs show a strong blueshift and their linewidths increase. The luminescence of the samples grown by PMOCVD is attributed to recombination of carriers/excitons localized at band-tail states. 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